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Effect of hydrogen in the migration behavior of strontium implanted into SiC was investigated. Polycrystalline SiC samples were first implanted with 300 keV Sr ions to a fluence of 2×10¹⁶ ions/cm² at room and 350 oC. Some of the implanted samples were then co-implanted with hydrogen ions of 15 keV at RT and 350 oC, to the fluence of 1x1017
ions/cm-2. The samples were then annealed at 1000 oC for 5 hours. Both the as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectroscopy (RBS). SRIM simulation indicated that Sr and H have approximately the same projected range. Co-implantation at RT amorphized SiC while co-implantation at 350 oC retained crystallinity with defects. Annealed caused some recrystallization in both samples which were accompanied by migration of Sr in RT co-implanted SiC and no migration in the 350 oC co-implanted SiC.
| Apply for student award at which level: | PhD |
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| Consent on use of personal information: Abstract Submission | Yes, I ACCEPT |
