7–11 Jul 2025
University of the Witwatersrand, Johannesburg
Africa/Johannesburg timezone

Effect of Cr doping on the electronic, thermal and magnetic properties of SrCo$_2$As$_2$

11 Jul 2025, 10:00
20m
Solomon Mahlangu House (University of the Witwatersrand, Johannesburg)

Solomon Mahlangu House

University of the Witwatersrand, Johannesburg

Oral Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Dr Sampad Mondal (1Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg 2000, Gauteng, South Africa 2Ramsaday College, Amta, Howrah 711401, West Bengal, India)

Description

The layered ThCr$_2$Si$_2$-type tetragonal compound, SrCo$_2$As$_2$ shows antiferromagnetic fluctuations, which are believed to be a precursor for superconductivity in the iron-arsenide family. However, the co-existence of ferromagnetic (FM) fluctuations likely precludes a superconducting ground state in this compound. Hence, it is important to investigate whether chemical doping suppresses FM fluctuations in order to reach a superconducting phase. We report here the effect of hole doping on structural, magnetic, and transport properties of high-quality single crystals of SrCo$_2$As$_2$ via partial substitution of Co by Cr. All the doped compositions crystallize remain in ThCr$_2$Si$_2$-type structure. The basal plane electrical resistivity ρab shows metallic behavior for all the doped compositions. The heat capacity $C_{\rm p}(T)$ and magnetic susceptibility $\chi(T)$ of the doped compositions infer the absence of long-range magnetic ordering down to 1.8 K . Sommerfeld coefficient obtained from low-temperature $C_{\rm p}(T)$ data decreases with an increase in Cr concentration, indicating the reduction of the density of states at the Fermi level $E_{\rm F}$. The $\chi_{ab}(T)$ ($H \parallel ab$-plane) and $\chi_{c}(T)$ ($H \parallel c$-axis) are anisotropic and the isothermal magnetization M is proportional to $H$ for both orientations of the applied field. We provide a detailed overview of the dependence of physical properties and electronic states with changes in carrier concentration.

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Primary author

Dr Sampad Mondal (1Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg 2000, Gauteng, South Africa 2Ramsaday College, Amta, Howrah 711401, West Bengal, India)

Co-authors

Abhishek Pandey (Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg 2000, Gauteng, South Africa) Prof. Daniel Wamwangi (Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg 2000, Gauteng, South Africa) Ms Mahlogonolo Morena (Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg 2000, Gauteng, South Africa)

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