7–11 Jul 2025
University of the Witwatersrand, Johannesburg
Africa/Johannesburg timezone

Optical spectroscopic investigations of antiferromagnetic semiconducting BaMn2P2

11 Jul 2025, 10:50
20m
Solomon Mahlangu House (University of the Witwatersrand, Johannesburg)

Solomon Mahlangu House

University of the Witwatersrand, Johannesburg

Oral Presentation Track A - Physics of Condensed Matter and Materials Physics of Condensed Matter and Materials

Speaker

Susan Jacobs (University of Johannesburg)

Description

Materials with ThCr2Si2-type crystal structure (Space Group: I4/mmm) have sparked scientific interest for several decades now owing to their novel properties and exotic ground states. The ThCr2Si2-type compounds have physical properties that are highly tunable, making this family of compounds ideal for investigating the structure-property relationship. Unconventional high Tc superconductivity was observed in iron-based arsenides, Ba1−xKxFe2As2 [1] and BaFe2−xCoxAs2 [2]. The quest for higher Tc superconductivity led research into other BaT2Pn2 compounds, where T = transition metal and Pn = P, As, Sb, Bi, revealing a variety of physical properties. BaMn2P2 is one such compound that was recently investigated by us [3]. Electrical resistivity and heat capacity measurements on single crystals of BaMn2P2 revealed an insulating ground state with a small band gap [3]. Anisotropic magnetic susceptibility measurements confirmed that BaMn2P2, like its As-, Sb- and Bi- counterparts, has collinear Néel type antiferromagnetism below TN = 795(15) K, which is the highest value for the family of 122-pnictide compounds thus far. Moreover, the magnetic susceptibility increases above TN, like in the As-, Sb-, and Bi-based compounds, suggesting that antiferromagnetic correlations persist above the magnetic ordering temperature. In this contribution, we probe the properties of this interesting compound using Raman spectroscopy, investigating its structure around TN. We also attempt to probe the effect of tweaking the ground states by changing charge-carrier concentrations.

References
1. M. Rotter, M. Pangerl, M. Tegel, D. Johrendt, Angew. Chem. Int. Ed. 47 7949 (2008).
2. A. S. Sefat, R. Y. Jin, M. A. McGuire, B. C. Sales, D. J. Singh, D. Mandrus, Phys. Rev. Lett. 101 117004 (2008).
3. B. S. Jacobs and Abhishek Pandey, Phys. Rev. Mater.7 044410 (2023).

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Primary authors

Susan Jacobs (University of Johannesburg) Rudolph Erasmus (University of the Witwatersrand, Johannesburg) Abhishek Pandey (School of Physics, University of the Witwatersrand)

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